What is CVD?
Chemical vapor deposition. A method of depositing thin films on a wafer through chemical reactions of source gases.
Field: Deposition (CVD and PVD)
CVD in the explanations
CVD oxides, depending on deposition conditions, may be less dense or contain hydrogen and moisture, so they usually etch faster.
When etched in the same dilute hydrofluoric acid, how do th…Plasma-enhanced CVD uses energetic plasma electrons to decompose and activate precursors, so it deposits at about 300–400 °C rather than the 600–800 °C typical of thermal CVD.
What is the main advantage of plasma CVD (PECVD)?TEOS (Si(OC2H5)4) is an organosilicon compound that is liquid at room temperature and is vaporized as a CVD precursor.
Which liquid organosilicon compound is widely used as a sou…
Questions that mention CVD (31)
- In epitaxial growth by CVD, the growth rate depends strongly on temperature in the relatively low-temperature regime. Why?
- Which is closest to the typical growth temperature for SiC epitaxy (CVD)?
- When etched in the same dilute hydrofluoric acid, how do the etch rates of thermal oxide and CVD oxide generally compare?
- What is the main advantage of plasma CVD (PECVD)?
- Which liquid organosilicon compound is widely used as a source for CVD of silicon oxide?
- Which gas is used as the source for tungsten CVD?
- Under what condition does CVD give good step coverage (conformality)?
- Which pair of source gases is used to deposit silicon nitride (Si3N4) by thermal CVD?
- In CVD equipment, which component supplies source gas uniformly over the wafer through many small holes?
- For films of the same material, in what way are high-temperature thermal CVD films generally better than plasma CVD films?
- Which correctly describes silicon nitride deposited by plasma CVD?
- Before filling contact holes with tungsten by CVD, what is the main reason a thin film such as TiN (titanium nitride) is deposited underneath?
- What is the main purpose of "densification", a high-temperature anneal after depositing oxide by low-temperature CVD or similar?
- Which type of CVD reactor heats only the stage holding the wafer while keeping the reactor walls cool?
- In CVD, what is the phenomenon called in which more source gas is consumed and the deposition rate drops as the area of wafers or patterns being coated increases?
Related terms
Plasma Precursor Silane (SiH4) Step coverage PECVD (plasma-enhanced CVD) LPCVD (low-pressure CVD) ALD TEOS STI (shallow trench isolation) Sputtering