CVD that decomposes source gases with plasma to deposit films. It can deposit at lower temperatures than thermal CVD and is used for insulating films in interconnect steps and the like.
Field: Deposition (CVD and PVD)
Plasma-enhanced CVD uses energetic plasma electrons to decompose and activate precursors, so it deposits at about 300–400 °C rather than the 600–800 °C typical of thermal CVD.
What is the main advantage of plasma CVD (PECVD)?A showerhead is a plate with hundreds to thousands of small holes that distributes precursor gas uniformly over the wafer; hole layout and size distribution tune film uniformity, and in PECVD it doubles as the upper electrode.
In CVD equipment, which component supplies source gas unifo…High-temperature thermal CVD reacts precursors fully, producing dense, near-stoichiometric films with few impurities such as hydrogen—LPCVD nitride contains only a few percent hydrogen, whereas PECVD nitride may contain around 20%.
For films of the same material, in what way are high-temper…CVD Plasma Precursor LPCVD (low-pressure CVD) Silane (SiH4) Passivation layer ALD Area-selective deposition Electroplating Electrostatic chuck