Deposition (CVD and PVD)

What is the main advantage of plasma CVD (PECVD)?

  1. AIt requires higher temperatures than thermal CVD
  2. BThe film contains no hydrogen at all
  3. CIt can deposit films at lower temperatures than thermal CVD
Show answer and explanation

Answer: C. It can deposit films at lower temperatures than thermal CVD

Plasma CVD uses plasma energy to decompose and activate source gases, so films can be deposited at lower temperatures than thermal CVD, which relies on heat alone. It is used in steps that cannot tolerate high temperatures, such as after wiring is formed. On the other hand, hydrogen from the source gases tends to be incorporated into the film.

Practice this topic Back to topic

More Deposition (CVD and PVD) questions

  1. Which correctly describes step coverage in deposition?
  2. Which deposition method is mainly used to fill trenches for copper wiring?
  3. Which is a characteristic of low-pressure CVD (LPCVD)?
  4. Which source gas is commonly used to deposit polysilicon by LPCVD?
  5. Which correctly describes vacuum evaporation?