Oxidation and diffusion

When etched in the same dilute hydrofluoric acid, how do the etch rates of thermal oxide and CVD oxide generally compare?

  1. AThermal oxide etches more slowly (it is denser)
  2. BThermal oxide etches faster
  3. CThey always etch at the same rate
Show answer and explanation

Answer: A. Thermal oxide etches more slowly (it is denser)

Thermal oxide is dense with few defects, so it etches slowly in hydrofluoric acid. CVD oxide may have lower density or contain hydrogen depending on deposition conditions, so it generally etches faster. The etch-rate ratio relative to thermal oxide is used as an indicator of film quality.

Practice this topic Back to topic

More Oxidation and diffusion questions

  1. Which defect grows when excess interstitial silicon generated by oxidation is injected into the silicon during thermal oxidation?
  2. If the thermal oxidation temperature is raised, how does the oxide thickness obtained in the same time change?
  3. In LOCOS (local oxidation), what is the phenomenon called in which oxide encroaches like a bird's beak under the edge of the nitride mask?
  4. What is an advantage of performing thermal oxidation in a high-pressure oxidizing atmosphere?
  5. Which is a characteristic of radical oxidation, which uses oxygen radicals?