What is Annealing?

Heat treatment. Used to repair crystal damage after ion implantation and to activate dopants, among other purposes.

Field: Ion implantation

Annealing in the explanations

Questions that mention Annealing (30)

  1. What is the main purpose of annealing (heat treatment) after ion implantation?
  2. What is the phenomenon called in which diffusion of boron and other dopants is temporarily accelerated early in annealing because of interstitial silicon created by implantation?
  3. Under the same annealing conditions, how does the sheet resistance of the implanted layer generally change when the implant dose is increased?
  4. When dopants are activated by annealing, which property sets the upper limit of the concentration that can be electrically activated?
  5. Which is a characteristic of laser annealing?
  6. Which technique deposits a Cu alloy with a small addition of manganese or similar and, through annealing, lets a thin barrier form spontaneously at the interface with the dielectric?
  7. Which correctly describes a hazard of hydrogen gas, used in epitaxial growth and annealing?
  8. Which generally describes the relationship between a MOSFET's gate length (the length of the gate electrode on the mask or after patterning) and its effective channel length?
  9. Which impurity is typically used to make p-type layers in GaN?
  10. Why does Mg-doped GaN grown by MOCVD remain highly resistive rather than p-type right after growth, and what is the countermeasure?
  11. In surface micromachining, what problem occurs if a structural thin film such as polysilicon has large internal residual stress?
  12. Which correctly describes a typical method of manufacturing SOI wafers?
  13. Heat treatment of a wafer diffuses oxygen out from near the surface, creating a low-defect layer at the surface where devices are made. What is this layer called?
  14. When CZ silicon is heat-treated around 450 °C, oxygen atoms can cluster and act as donors, changing the wafer's resistivity. What is this called?
  15. When a polar compound semiconductor such as GaAs is grown on a non-polar silicon substrate, what is the boundary called between regions in which the Ga and As positions are inverted?

Related terms

Ion implantation Transient enhanced diffusion (TED) Mobility Acceptor Solid solubility GaN (gallium nitride) CMP RTP (rapid thermal processing) CVD Implant dose

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