What is Precursor?
A source compound that reacts to form the desired film in CVD or ALD, such as TEOS or metal-organic compounds.
Precursor in the explanations
At high temperature reactions are fast and the arrival rate of precursor gas limits growth (mass-transport-limited), making gas-flow uniformity critical.
In epitaxial growth by CVD, the growth rate depends strongl…Hydrogen carries the precursor, participates as a reducing agent, maintains a reducing atmosphere that prevents surface oxidation, and removes chlorine as HCl.
In silicon epitaxial growth, what is the main role of the l…CVD relies on chemical reactions of precursor gases, and thermal oxidation oxidizes the silicon itself.
Into which category does deposition by sputtering fall?
Questions that mention Precursor (13)
- In epitaxial growth by CVD, the growth rate depends strongly on temperature in the relatively low-temperature regime. Why?
- In silicon epitaxial growth, what is the main role of the large flow of hydrogen (H2) supplied along with the source gas?
- Into which category does deposition by sputtering fall?
- Which is a characteristic of ALD (atomic layer deposition)?
- Which liquid organosilicon compound is widely used as a source for CVD of silicon oxide?
- Under what condition does CVD give good step coverage (conformality)?
- In CVD equipment, which component supplies source gas uniformly over the wafer through many small holes?
- What is the approximate film thickness deposited in one ALD cycle?
- In PVD such as sputtering and evaporation, why is it hard to coat the sidewalls and bottoms of deep trenches?
- Before filling contact holes with tungsten by CVD, what is the main reason a thin film such as TiN (titanium nitride) is deposited underneath?
- In ALD, what is the temperature range called in which self-limiting surface reactions keep the thickness per cycle constant?
- Which is an example of the precursors used to deposit HfO2 gate dielectrics by ALD?
- In CVD, what is the phenomenon called in which more source gas is consumed and the deposition rate drops as the area of wafers or patterns being coated increases?
Related terms
CVD ALD Step coverage Epitaxial growth Sputtering Plasma Thermal oxidation TEOS Silane (SiH4) PECVD (plasma-enhanced CVD)