Epitaxial growth

Which is closest to the typical growth temperature for SiC epitaxy (CVD)?

  1. AAbout 600 °C
  2. BAbout 1,000 °C
  3. CAbout 1,500 to 1,650 °C
Show answer and explanation

Answer: C. About 1,500 to 1,650 °C

SiC has strong bonds and its atoms move with difficulty, so good epitaxial layers require temperatures of about 1,500 to 1,650 °C, higher than for silicon. Silane-type gases and hydrocarbons such as propane are used as sources, and reactor parts must withstand the high temperature.

  • A. Good single-crystal SiC does not grow at about 600 °C.
  • B. About 1,000 °C is close to the temperature for silicon epitaxy.
  • C. Correct. It is grown at about 1,500 to 1,650 °C.
Practice this topic Back to topic

More Epitaxial growth questions

  1. Which type of reactor is mainstream for silicon epitaxial growth on 300 mm wafers?
  2. In heteroepitaxy of materials with very different lattice constants, what is the purpose of inserting a "graded buffer layer" whose composition changes gradually?
  3. In the X-ray diffraction rocking curve used to evaluate the crystal quality of an epitaxial layer, what does a narrow peak width (FWHM) indicate?
  4. In MOCVD growth of GaN, what does the controlled condition "V/III ratio" mean?
  5. When a lightly doped epi layer is grown at high temperature on a heavily doped substrate, what is the phenomenon called in which substrate dopants seep into the epi layer by solid-state diffusion, smoothing the concentration change at the interface?