Deposition (CVD and PVD)

Which pair of source gases is used to deposit silicon nitride (Si3N4) by thermal CVD?

  1. ADichlorosilane and ammonia
  2. BSilane and oxygen
  3. CTungsten hexafluoride and hydrogen
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Answer: A. Dichlorosilane and ammonia

Silicon nitride by LPCVD is typically made by reacting dichlorosilane (SiH2Cl2) with ammonia (NH3) at about 700–800 °C. Silane and oxygen are used for oxide, and WF6 and hydrogen for tungsten.

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More Deposition (CVD and PVD) questions

  1. What is the method called that sputters a titanium target in a nitrogen-containing gas to form titanium nitride (TiN) films?
  2. What is an advantage of plasma-enhanced ALD (PEALD)?
  3. In CVD equipment, which component supplies source gas uniformly over the wafer through many small holes?
  4. Which deposition method fills very narrow, deep trenches from the bottom with a flowable film and then solidifies it?
  5. What is generally done to increase the deposition rate in sputtering?