Deposition (CVD and PVD)

Which method is used to tune the stress of plasma CVD silicon nitride from compressive to tensile?

  1. ARinsing it with water after deposition
  2. BChanging parameters such as the ratio of high- to low-frequency RF power to adjust the strength of ion bombardment of the film
  3. CChanging the wafer diameter
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Answer: B. Changing parameters such as the ratio of high- to low-frequency RF power to adjust the strength of ion bombardment of the film

In plasma CVD, applying low-frequency RF power makes ions bombard the film strongly, compacting it and tending to produce compressive stress. Changing the ratio of high- to low-frequency power and similar parameters tunes the stress from compressive to tensile. This is also used for stress liner films that strain transistors.

  • A. Rinsing with water cannot tune the stress.
  • B. Correct. RF power conditions adjust the ion bombardment.
  • C. Stress is not tuned by wafer diameter.
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More Deposition (CVD and PVD) questions

  1. Into which category does deposition by sputtering fall?
  2. Which is a characteristic of ALD (atomic layer deposition)?
  3. What is the main advantage of plasma CVD (PECVD)?
  4. Which correctly describes step coverage in deposition?
  5. Which deposition method is mainly used to fill trenches for copper wiring?