What is LPCVD (low-pressure CVD)?

LPCVD (low-pressure CVD) in the explanations

• LPCVD is thermal CVD performed at reduced pressure, tens to hundreds of Pa.

  Which is a characteristic of low-pressure CVD (LPCVD)?

• LPCVD silicon nitride is typically formed by reacting dichlorosilane (SiH2Cl2) with ammonia (NH3) at about 700–800 °C (3SiH2Cl2 + 4NH3 → Si3N4 + 6HCl + 6H2), giving dense, near-stoichiometric films; excess ammonia keeps the composition on target.

  Which pair of source gases is used to deposit silicon nitri…

• High-temperature thermal CVD reacts precursors fully, producing dense, near-stoichiometric films with few impurities such as hydrogen—LPCVD nitride contains only a few percent hydrogen, whereas PECVD nitride may contain around 20%.

  For films of the same material, in what way are high-temper…

Questions that mention LPCVD (low-pressure CVD) (6)

1. Which is a characteristic of low-pressure CVD (LPCVD)?
2. Which source gas is commonly used to deposit polysilicon by LPCVD?
3. What is it called when a gas containing a dopant such as phosphorus is flowed during LPCVD polysilicon deposition to make a conductive film?
4. Which pair of source gases is used to deposit silicon nitride (Si3N4) by thermal CVD?
5. For films of the same material, in what way are high-temperature thermal CVD films generally better than plasma CVD films?
6. Which type of CVD reactor heats only the stage holding the wafer while keeping the reactor walls cool?

Related terms

CVD Silane (SiH4) Plasma Step coverage TEOS MEMS Phosphine (PH3) ALD PECVD (plasma-enhanced CVD) Area-selective deposition