What is CMP?

Chemical mechanical polishing. Planarizes the wafer surface by combining the chemical action of a slurry with mechanical polishing by a pad.

Field: CMP and cleaning

CMP in the explanations

Questions that mention CMP (52)

  1. In the mirror polishing (final CMP polishing) of silicon wafers, what is commonly used as the abrasive in the slurry?
  2. Which correctly describes CMP (chemical mechanical polishing)?
  3. Which correctly describes 'dishing' in CMP?
  4. Which correctly describes the slurry used in CMP?
  5. What in particular must be removed by cleaning after CMP?
  6. Which method is used to detect the polishing endpoint in CMP?
  7. In Preston's equation for CMP removal rate, which quantity is the removal rate proportional to?
  8. Which abrasive particles are often used in STI CMP to achieve high polishing selectivity of oxide to silicon nitride?
  9. What is the role of benzotriazole (BTA) and similar additives in copper CMP slurries?
  10. What is the role of the retaining ring that surrounds the wafer in a CMP polishing head?
  11. What is the main cause of fine scratches on the wafer surface in CMP?
  12. Which combination correctly lists processes in which CMP is used?
  13. What is the operation called in which the surface of a CMP pad is dressed with a diamond tool to stabilize the removal rate?
  14. Compared with planarization by thermal reflow or etch-back, what is an advantage of CMP?
  15. Why are oxidizers such as hydrogen peroxide added to the slurry in tungsten CMP?

Related terms

Slurry STI (shallow trench isolation) Ceria (cerium oxide) Preston's equation Depth of focus (DOF) Yield Dual damascene Annealing LOCOS Electromigration

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