CMP and cleaning

Which correctly describes CMP (chemical mechanical polishing)?

  1. AIt planarizes the surface by combining the chemical action of a slurry with mechanical polishing by a pad
  2. BIt planarizes the surface by etching it with ions from a plasma
  3. CIt planarizes the surface by melting it at high temperature
Show answer and explanation

Answer: A. It planarizes the surface by combining the chemical action of a slurry with mechanical polishing by a pad

In CMP, the wafer is pressed against a rotating polishing pad while a slurry containing abrasive particles and chemicals is supplied. Chemical reactions soften the surface and mechanical polishing removes it, planarizing wide areas with high precision. It is essential for forming multilevel interconnects.

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More CMP and cleaning questions

  1. What is the main purpose of SC-1 (a mixture of ammonia and hydrogen peroxide) in RCA cleaning?
  2. Which correctly describes 'dishing' in CMP?
  3. What is the main purpose of cleaning with dilute hydrofluoric acid (DHF)?
  4. Which correctly describes the slurry used in CMP?
  5. What is the main purpose of cleaning with a mixture of sulfuric acid and hydrogen peroxide (SPM)?