CMP and cleaning

Which correctly describes 'dishing' in CMP?

  1. AThe polishing pad wears down and becomes flat
  2. BSlurry particles stick to and remain on the wafer
  3. CThe center of wide wiring is over-polished relative to its surroundings, becoming dish-shaped
Show answer and explanation

Answer: C. The center of wide wiring is over-polished relative to its surroundings, becoming dish-shaped

Dishing occurs in wide metal features, where the soft metal in the center is removed more than the surrounding insulator, creating a dish-like recess. It increases wire resistance and degrades the flatness of upper layers. Over-polishing of entire areas of dense wiring is called erosion.

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More CMP and cleaning questions

  1. What is the main purpose of cleaning with dilute hydrofluoric acid (DHF)?
  2. Which correctly describes the slurry used in CMP?
  3. What is the main purpose of cleaning with a mixture of sulfuric acid and hydrogen peroxide (SPM)?
  4. What in particular must be removed by cleaning after CMP?
  5. What is an advantage of single-wafer cleaning tools, which process one wafer at a time?