CMP and cleaning

Which correctly describes the slurry used in CMP?

  1. AA polishing liquid with abrasive particles such as silica or ceria dispersed in a chemical solution
  2. BA light-sensitive resin applied to the wafer
  3. CA gas for generating plasma
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Answer: A. A polishing liquid with abrasive particles such as silica or ceria dispersed in a chemical solution

Slurry consists of fine abrasive particles such as silica (SiO2), ceria (CeO2) or alumina dispersed in a solution containing oxidizers, pH adjusters and other chemicals. The particle type and chemical composition are chosen to suit the film being polished.

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More CMP and cleaning questions

  1. What is the main purpose of cleaning with a mixture of sulfuric acid and hydrogen peroxide (SPM)?
  2. What in particular must be removed by cleaning after CMP?
  3. What is an advantage of single-wafer cleaning tools, which process one wafer at a time?
  4. What is the main purpose of using IPA (isopropyl alcohol) when drying wafers after cleaning?
  5. Which method is used to detect the polishing endpoint in CMP?