CMP and cleaning

What is the main cause of fine scratches on the wafer surface in CMP?

  1. APolishing pressure set to zero
  2. BLow cleaning-solution temperature
  3. CLarge agglomerated particles in the slurry, or foreign matter left on the pad
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Answer: C. Large agglomerated particles in the slurry, or foreign matter left on the pad

When abrasive particles in the slurry agglomerate into large clumps or hard foreign matter remains on the pad, they scratch the wafer surface. Because scratches cause open and short circuits in wiring, they are prevented by filtering and managing the slurry and conditioning the pad.

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More CMP and cleaning questions

  1. To prevent fine structures from collapsing, which method removes native oxide and the like without using liquids?
  2. Which combination correctly lists processes in which CMP is used?
  3. What is the operation called in which the surface of a CMP pad is dressed with a diamond tool to stabilize the removal rate?
  4. Compared with planarization by thermal reflow or etch-back, what is an advantage of CMP?
  5. Which correctly describes the order and purposes of SC-1 and SC-2 in standard RCA cleaning?