CMP and cleaning

What in particular must be removed by cleaning after CMP?

  1. APhotoresist film
  2. BSlurry abrasive particles and metal contamination left on the wafer surface
  3. CAll of the underlying oxide
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Answer: B. Slurry abrasive particles and metal contamination left on the wafer surface

After CMP, slurry abrasive particles, polishing debris and metal ions remain on the wafer surface. Because they cause defects, they are removed by brush scrubbing and chemical cleaning. CMP and cleaning are generally performed in an integrated tool.

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More CMP and cleaning questions

  1. What is an advantage of single-wafer cleaning tools, which process one wafer at a time?
  2. What is the main purpose of using IPA (isopropyl alcohol) when drying wafers after cleaning?
  3. Which method is used to detect the polishing endpoint in CMP?
  4. In Preston's equation for CMP removal rate, which quantity is the removal rate proportional to?
  5. Which abrasive particles are often used in STI CMP to achieve high polishing selectivity of oxide to silicon nitride?