What is Thermal oxidation?
A method of forming an SiO2 film on silicon by heating it in oxygen or water vapor. There are dry and wet oxidation.
Field: Oxidation and diffusion
Thermal oxidation in the explanations
Thermal oxidation of silicon is generally carried out at about 800–1,200 °C, faster at higher temperatures and well below silicon's melting point of about 1,414 °C.
Which is closest to the temperature range at which silicon …In thermal oxidation silicon itself reacts with oxygen to form SiO2.
When an SiO2 film of thickness x is formed by thermally oxi…Thermal oxidation, diffusion and annealing often use vertical furnaces that stack about 100 wafers in a quartz tube.
Which equipment is commonly used to thermally oxidize many …
Questions that mention Thermal oxidation (16)
- Which correctly compares dry oxidation (O2) and wet oxidation (H2O) in the thermal oxidation of silicon?
- Once the oxide has become sufficiently thick in thermal oxidation, how does its thickness relate to oxidation time?
- How does the thermal oxidation rate of silicon depend on crystal orientation?
- What is the main purpose of adding a small amount of chlorine-containing gas such as hydrogen chloride (HCl) during thermal oxidation?
- Which value is closest to the relative permittivity of SiO2 formed by thermal oxidation?
- Which defect grows when excess interstitial silicon generated by oxidation is injected into the silicon during thermal oxidation?
- If the thermal oxidation temperature is raised, how does the oxide thickness obtained in the same time change?
- What is an advantage of performing thermal oxidation in a high-pressure oxidizing atmosphere?
- According to the Deal-Grove model, where does thermal oxidation take place?
- Which chemical reaction occurs in the dry thermal oxidation of silicon?
- Which is closest to the temperature range at which silicon thermal oxidation is generally carried out?
- In the Deal-Grove model, what is the relationship between oxide thickness and time early in thermal oxidation, while the oxide is still thin?
- Which correctly describes the thermal oxidation of heavily doped polycrystalline silicon (polysilicon)?
- When an SiO2 film of thickness x is formed by thermally oxidizing silicon, approximately how much silicon is consumed?
- Which equipment is commonly used to thermally oxidize many wafers at once?
Related terms
Dry oxidation Wet oxidation Deal-Grove model Crystal orientation Radical ALD Mobile ions EOT (equivalent oxide thickness) Oxynitride (SiON) Oxygen precipitates (BMD)