A model of thermal oxidation in which the oxidant diffuses through the oxide and reacts with silicon at the Si/SiO2 interface. Thickness grows linearly with time for thin oxides and with the square root of time for thick ones.
Field: Oxidation and diffusion
The Deal-Grove model (1965) treats oxidation as oxidant entering the oxide surface from the gas, diffusing through the film and reacting with silicon at the interface to form new oxide.
According to the Deal-Grove model, where does thermal oxida…The Deal-Grove model describes thick-oxide growth well, but dry oxidation in the initial regime below a few tens of nm proceeds faster than predicted.
When thin oxides of a few tens of nanometers or less are gr…The Deal-Grove model gives x² + Ax = B(t + τ).
Once the oxide has become sufficiently thick in thermal oxi…Thermal oxidation Dry oxidation Bird's beak Drive-in Forming gas anneal Interface states LOCOS Mobile ions Oxidation-enhanced diffusion (OED) Oxynitride (SiON)