Oxidation and diffusion

According to the Deal-Grove model, where does thermal oxidation take place?

  1. AAt the outermost surface of the oxide, where silicon atoms react with the oxidant
  2. BSilicon atoms diffuse to the oxide surface and react there
  3. CThe oxidant diffuses through the oxide and reacts with silicon at the Si/SiO2 interface
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Answer: C. The oxidant diffuses through the oxide and reacts with silicon at the Si/SiO2 interface

In the Deal-Grove model, the oxidant (O2 or H2O) adsorbs at the oxide surface, diffuses through the oxide, and reacts at the interface with silicon to form new oxide. The thicker the oxide, the longer diffusion takes, so growth slows.

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More Oxidation and diffusion questions

  1. Which chemical reaction occurs in the dry thermal oxidation of silicon?
  2. Which is closest to the temperature range at which silicon thermal oxidation is generally carried out?
  3. Which correctly describes "diffusion" of impurities in semiconductor manufacturing?
  4. Which is a typical use of thermally grown silicon oxide?
  5. What is the correct unit of the diffusion coefficient D?