Oxidation and diffusion

Which is one of the major reasons silicon has been so widely used as a material for MOS devices?

  1. AIt has a direct band gap and emits light efficiently
  2. BIts electron mobility is the highest of all semiconductors
  3. CSimple thermal oxidation forms a high-quality insulator (SiO2) with few interface states
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Answer: C. Simple thermal oxidation forms a high-quality insulator (SiO2) with few interface states

Silicon forms an SiO2 film with high insulating quality and few defects (interface states) at the silicon interface simply by thermal oxidation. This excellent MOS interface is one of the major reasons silicon has been widely used for MOSFETs and LSIs.

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More Oxidation and diffusion questions

  1. What problem occurs when mobile ions such as sodium are present in the gate oxide?
  2. Which n-type dopant diffuses relatively slowly in silicon during heat treatment, making shallow junctions easier to form?
  3. Which correctly describes pyrogenic oxidation (hydrogen combustion oxidation)?
  4. What is the approximate breakdown field of high-quality thermal oxide (SiO2)?
  5. Which method reacts hydrogen and oxygen near the wafer surface to form a high-quality thin oxide in a short time?