Oxidation and diffusion

What is an advantage of performing thermal oxidation in a high-pressure oxidizing atmosphere?

  1. AOxidation slows down, allowing precise thickness control
  2. BOxidation is fast even at low temperature, limiting dopant diffusion due to heat
  3. CThe oxide becomes conductive
Show answer and explanation

Answer: B. Oxidation is fast even at low temperature, limiting dopant diffusion due to heat

Raising the oxidant pressure increases the amount of oxidant dissolved in the oxide, increasing the oxidation rate. The same thickness can then be grown at lower temperature, limiting dopant diffusion and the formation of crystal defects due to heat.

Practice this topic Back to topic

More Oxidation and diffusion questions

  1. Which is a characteristic of radical oxidation, which uses oxygen radicals?
  2. According to the Deal-Grove model, where does thermal oxidation take place?
  3. Which chemical reaction occurs in the dry thermal oxidation of silicon?
  4. Which is closest to the temperature range at which silicon thermal oxidation is generally carried out?
  5. Which correctly describes "diffusion" of impurities in semiconductor manufacturing?