Oxidation and diffusion

Which defect grows when excess interstitial silicon generated by oxidation is injected into the silicon during thermal oxidation?

  1. ACOP
  2. BOxidation-induced stacking fault (OSF)
  3. CHillock
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Answer: B. Oxidation-induced stacking fault (OSF)

When silicon oxidizes, not all silicon atoms are incorporated into the oxide; some are released into the substrate as interstitials. These cluster and grow into stacking faults called oxidation-induced stacking faults (OSFs), which cause leakage current.

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More Oxidation and diffusion questions

  1. If the thermal oxidation temperature is raised, how does the oxide thickness obtained in the same time change?
  2. In LOCOS (local oxidation), what is the phenomenon called in which oxide encroaches like a bird's beak under the edge of the nitride mask?
  3. What is an advantage of performing thermal oxidation in a high-pressure oxidizing atmosphere?
  4. Which is a characteristic of radical oxidation, which uses oxygen radicals?
  5. According to the Deal-Grove model, where does thermal oxidation take place?