Oxidation and diffusion

Which is closest to the temperature range at which silicon thermal oxidation is generally carried out?

  1. AAbout 100 to 200 °C
  2. BAbout 800 to 1,200 °C
  3. CAbout 2,000 to 3,000 °C
Show answer and explanation

Answer: B. About 800 to 1,200 °C

Thermal oxidation of silicon is generally carried out at high temperatures of about 800 to 1,200 °C; the higher the temperature, the faster the oxidation. Since silicon melts at about 1,414 °C, the process is run well below that.

  • A. At about 100 to 200 °C, silicon hardly oxidizes.
  • B. Correct. It is done at about 800 to 1,200 °C.
  • C. Above about 2,000 °C exceeds silicon's melting point.
Practice this topic Back to topic

More Oxidation and diffusion questions

  1. Which correctly describes "diffusion" of impurities in semiconductor manufacturing?
  2. Which is a typical use of thermally grown silicon oxide?
  3. What is the correct unit of the diffusion coefficient D?
  4. Which correctly expresses Fick's first law? (J: diffusion flux, D: diffusion coefficient, C: concentration, x: position)
  5. When diffusing impurities at the same temperature, if the diffusion time is quadrupled, by roughly what factor does the spreading distance change?