Oxidation and diffusion

Which value is closest to the relative permittivity of SiO2 formed by thermal oxidation?

  1. AAbout 1
  2. BAbout 3.9
  3. CAbout 25
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Answer: B. About 3.9

The relative permittivity of SiO2 is about 3.9. Hafnium oxide, a high-k material, is about 20–25, and low-k materials are generally 3 or below. The SiO2 value is often used as the reference when comparing dielectric constants.

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More Oxidation and diffusion questions

  1. Which is one of the major reasons silicon has been so widely used as a material for MOS devices?
  2. What problem occurs when mobile ions such as sodium are present in the gate oxide?
  3. Which n-type dopant diffuses relatively slowly in silicon during heat treatment, making shallow junctions easier to form?
  4. Which correctly describes pyrogenic oxidation (hydrogen combustion oxidation)?
  5. What is the approximate breakdown field of high-quality thermal oxide (SiO2)?