What is EOT (equivalent oxide thickness)?

EOT (equivalent oxide thickness) in the explanations

• EOT expresses a gate dielectric's capacitance as the thickness of SiO2 (relative permittivity 3.9) that would give the same value: EOT = physical thickness × 3.9/ε.

  Which correctly describes EOT (equivalent oxide thickness)?

• SiO2 is about 3.9, and gate dielectrics are compared by their equivalent oxide thickness (EOT) relative to this value.

  Which value is closest to the relative permittivity of sili…

• Together with poly depletion, this makes the electrical thickness (CET) exceed the physical EOT, and it matters more as EOT shrinks.

  In a MOSFET with a very thin gate insulator, what is the ef…

Questions that mention EOT (equivalent oxide thickness) (7)

1. Which correctly describes EOT (equivalent oxide thickness)?
2. Which value is closest to the relative permittivity of silicon?
3. In a MOSFET with a very thin gate insulator, what is the effect of the electron distribution in the inversion layer peaking slightly away from the interface?
4. In high-k/metal gate transistors, why is a very thin layer such as SiO2 often placed between the silicon and the high-k film (such as hafnium oxide)?
5. What is the main purpose of introducing nitrogen into the gate oxide to make an oxynitride (SiON)?
6. Which value is closest to the relative permittivity of SiO2 formed by thermal oxidation?
7. What is the treatment called that introduces plasma-generated nitrogen into the surface of a thin gate oxide?

Related terms

Oxynitride (SiON) Mobility Junction capacitance (depletion capacitance) Inversion layer Annealing Threshold voltage Thermal oxidation Plasma CFET (complementary FET) DTCO (design-technology co-optimization)