Silicon wafers

Which correctly describes a typical method of manufacturing SOI wafers?

  1. AThe buried oxide is made just by thermally oxidizing silicon
  2. BThe wafer is melted and recrystallized
  3. CA wafer implanted with hydrogen ions is bonded to another wafer and split at the implant depth, leaving a thin silicon layer
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Answer: C. A wafer implanted with hydrogen ions is bonded to another wafer and split at the implant depth, leaving a thin silicon layer

In a typical method (Smart Cut), a wafer with an oxidized surface is implanted with hydrogen ions, bonded to a support wafer, and split at the hydrogen implant depth by heat treatment. This leaves an SOI wafer with a thin single-crystal silicon layer on the oxide. The split-off wafer can be reused.

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More Silicon wafers questions

  1. Which crystal orientation is commonly used for silicon wafers for CMOS LSIs?
  2. Which correctly describes the relationship between the resistivity of a silicon wafer and its doping concentration?
  3. Which is closest to the standard thickness of a 300 mm silicon wafer?
  4. In the CZ method, what is the main purpose of controlling the ratio of pull rate to temperature gradient in the crystal (V/G)?
  5. Which is the typical method for producing high-purity polycrystalline silicon?