MOSFET

Which generally describes the relationship between a MOSFET's gate length (the length of the gate electrode on the mask or after patterning) and its effective channel length?

  1. AThe effective channel length is shorter than the gate length by the amount the source and drain extend laterally under the gate
  2. BThe effective channel length is always longer than the gate length
  3. CThe effective channel length always equals the gate length exactly
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Answer: A. The effective channel length is shorter than the gate length by the amount the source and drain extend laterally under the gate

Source and drain dopants spread slightly sideways under the gate electrode during implantation and annealing. The channel length through which current actually flows (the effective channel length) is therefore shorter than the gate electrode by the overlap on both sides. The overlap regions also form gate-to-source/drain overlap capacitance.

  • A. Correct. It is shorter by the lateral extension (overlap).
  • B. Dopants extend under the gate, so the effective length gets shorter, not longer.
  • C. Because of lateral diffusion, they generally do not match.
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More MOSFET questions

  1. Which correctly describes punch-through in a MOSFET?
  2. In a pass transistor (switch) made of a single nMOSFET with its gate at the supply voltage VDD, how high does the output rise when passing an input of VDD?
  3. In a CMOS inverter, what is the current that flows from the supply to ground while the input is switching called?
  4. Power MOSFETs are easy to use in parallel. Which statement about the temperature dependence of on-resistance explains why?
  5. Under Dennard (constant-field) scaling, which statement is correct when dimensions and voltages are each scaled by 1/k?