Ion implantation

What is the phenomenon called in which diffusion of boron and other dopants is temporarily accelerated early in annealing because of interstitial silicon created by implantation?

  1. ATransient enhanced diffusion (TED)
  2. BGettering
  3. CSegregation
Show answer and explanation

Answer: A. Transient enhanced diffusion (TED)

Excess interstitial silicon atoms created by ion implantation assist the diffusion of boron and other dopants, so diffusion is greatly enhanced for a time early in annealing. This is called transient enhanced diffusion (TED). Because it hinders shallow junctions, it is suppressed with short anneals and other techniques.

Practice this topic Back to topic

More Ion implantation questions

  1. Which type of ion implanter is used to implant large doses in a short time, as for source/drain formation?
  2. Under the same annealing conditions, how does the sheet resistance of the implanted layer generally change when the implant dose is increased?
  3. What must be considered when using photoresist as a mask for ion implantation?
  4. What is an advantage of plasma doping, in which the wafer is exposed directly to a dopant-containing plasma and implanted with low-energy ions?
  5. When implanting with the wafer tilted, what is the phenomenon called in which areas in the shadow of tall patterns such as resist receive no implant?