What is Acceptor?
An impurity that accepts electrons from a semiconductor and creates holes. For silicon, group III elements such as boron (B) act as acceptors and make p-type semiconductors.
Field: Semiconductor physics
Acceptor in the explanations
Arsenic is about 0.054 eV, and the boron acceptor level is about 0.045 eV above the valence band.
Where in the band gap is the donor level created by phospho…Adding a group V atom (such as phosphorus) with one extra valence electron creates a donor, and a group III atom (such as boron) with one fewer creates an acceptor—the basis of doping.
How many valence (outermost-shell) electrons does a silicon…Boron is the standard acceptor in silicon, with a shallow level about 0.045 eV above the valence band, so it is almost fully ionized at room temperature.
Which statement is correct when boron (B) is added to silic…
Questions that mention Acceptor (11)
- Where in the band gap is the donor level created by phosphorus in silicon?
- How many valence (outermost-shell) electrons does a silicon atom have?
- Which statement is correct when boron (B) is added to silicon as an impurity?
- Which statement correctly describes the depletion layer of a PN junction in thermal equilibrium?
- In a MOS structure on a p-type substrate, what is the state of the semiconductor surface when a negative voltage is applied to the gate?
- How does the threshold voltage change when the impurity concentration of the channel region (p-type substrate) of an nMOSFET is increased?
- Which impurity is typically used to make p-type layers in GaN?
- When silicon is added to GaAs to make it n-type, which site does the silicon mainly occupy?
- Why does Mg-doped GaN grown by MOCVD remain highly resistive rather than p-type right after growth, and what is the countermeasure?
- Which correctly pairs dopants implanted into silicon with the conductivity type they produce?
- Which element, heavier than boron, has been considered and used as a p-type dopant to create steep retrograde profiles in nMOS channels?
Related terms
Donor Annealing GaN (gallium nitride) Band gap Depletion layer Threshold voltage Mobility Random dopant fluctuation (RDF) GAA (gate-all-around) Work function