A temporary speed-up of boron and other dopant diffusion early in post-implant annealing, caused by excess silicon interstitials from the implant. It hinders the formation of shallow junctions.
Field: Ion implantation
It subsides once the interstitials annihilate at the surface and elsewhere—hence "transient" enhanced diffusion (TED)—and is worst for long, relatively low-temperature anneals.
What is the phenomenon called in which diffusion of boron a…Boron diffusion is enhanced with the help of silicon interstitials (TED).
When forming shallow p-type junctions, what is the main pur…Most pairs recombine during annealing, but leftover interstitials drive transient enhanced diffusion and end-of-range defects.
What is the pair of a vacancy and an interstitial atom call…Annealing Channeling Faraday cup Halo implant (pocket implant) Implant dose Ion implantation Laser anneal Plasma doping Pre-amorphization implant (PAI) Projected range