Process materials (gases and chemicals)

Which gas is sometimes used as the oxidant with silane to deposit silicon oxide or oxynitride films by CVD?

  1. AArgon (Ar)
  2. BHelium (He)
  3. CNitrous oxide (N2O)
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Answer: C. Nitrous oxide (N2O)

Nitrous oxide (N2O) serves as the oxidant reacted with silane to form silicon oxide in plasma CVD and similar. It reacts more gently than oxygen, making it easier to suppress gas-phase particle formation, and under some conditions it incorporates nitrogen to form oxynitride.

  • A. Argon is inert and is not an oxidant.
  • B. Helium is inert and is not an oxidant.
  • C. Correct. It is used as an oxidant with silane.
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