Deposition (CVD and PVD)

Which is a characteristic of low-pressure CVD (LPCVD)?

  1. AOperating at reduced pressure gives good thickness uniformity and allows many wafers to be processed at once
  2. BOperating at atmospheric pressure makes the equipment the simplest
  3. CUsing plasma allows deposition at room temperature
Show answer and explanation

Answer: A. Operating at reduced pressure gives good thickness uniformity and allows many wafers to be processed at once

LPCVD is thermal CVD performed at reduced pressure, tens to hundreds of Pa. Gas molecules diffuse easily and the surface reaction is rate-limiting, so uniform films are obtained even with many wafers stood up in a row. It is used to deposit polysilicon, silicon nitride, oxide and more.

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More Deposition (CVD and PVD) questions

  1. Which source gas is commonly used to deposit polysilicon by LPCVD?
  2. Which correctly describes vacuum evaporation?
  3. What problem tends to occur when a deposited thin film has large internal stress?
  4. What is the method called in which liquid material is dropped onto the center of a wafer and spun at high speed to form a uniform film?
  5. Which liquid organosilicon compound is widely used as a source for CVD of silicon oxide?