Deposition (CVD and PVD)

Which source gas is commonly used to deposit polysilicon by LPCVD?

  1. AArgon
  2. BSilane (SiH4)
  3. CCarbon dioxide
Show answer and explanation

Answer: B. Silane (SiH4)

Polysilicon is deposited by thermally decomposing silane at around 600 °C. Grain size changes with deposition temperature, and at lower temperatures the film becomes amorphous silicon. It is used for gate electrodes, resistors, capacitor electrodes and more.

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More Deposition (CVD and PVD) questions

  1. Which correctly describes vacuum evaporation?
  2. What problem tends to occur when a deposited thin film has large internal stress?
  3. What is the method called in which liquid material is dropped onto the center of a wafer and spun at high speed to form a uniform film?
  4. Which liquid organosilicon compound is widely used as a source for CVD of silicon oxide?
  5. Which gas is used as the source for tungsten CVD?