What is GAA (gate-all-around)?
A transistor structure in which the gate surrounds the channel on all sides. It controls current better than FinFET and is used in the generations after FinFET.
GAA (gate-all-around) in the explanations
A gate-all-around (GAA) transistor stacks several channels shaped as sheets a few nm thick (nanosheets) or wires, each fully surrounded by the gate.
Which correctly describes a GAA (gate-all-around) transisto…A FinFET's channel width can change only by fin count, but in nanosheet GAA the stacked sheets' width (e.g., 15–50 nm) can be varied continuously in layout.
Compared with FinFETs, what is a design advantage of nanosh…Nanosheet GAA starts from an epitaxial stack of alternating Si and SiGe (about 25–30% Ge).
In manufacturing nanosheet GAA transistors, why is only the…
Questions that mention GAA (gate-all-around) (20)
- Which correctly describes a GAA (gate-all-around) transistor?
- Which correctly describes the CFET (complementary FET), researched as the structure to follow GAA?
- Compared with FinFETs, what is a design advantage of nanosheet GAA transistors?
- In manufacturing nanosheet GAA transistors, why is only the SiGe selectively removed from stacked alternating Si and SiGe layers?
- In nanosheet GAA, what is the main role of the insulator (inner spacer) placed between the gate and the source/drain between the sheets?
- Which company and generation were first to announce volume production of GAA (nanosheet) transistors?
- What does "nanosheet" refer to in a nanosheet GAA transistor?
- In nanosheet GAA transistors now in production, how many nanosheets are typically stacked in one transistor?
- How does carrier mobility generally change when the impurity concentration in silicon is increased?
- How does the threshold voltage change when the impurity concentration of the channel region (p-type substrate) of an nMOSFET is increased?
- Which correctly describes punch-through in a MOSFET?
- How is silicon germanium (SiGe) classified?
- How is the effective channel width of a FinFET adjusted?
- Which correctly describes materials such as molybdenum disulfide (MoS2), researched as channel materials for future ultra-small transistors?
- Which correctly describes the transistor performance metric "Ion/Ioff ratio"?
Related terms
Nanosheet FinFET SiGe (silicon-germanium) Mobility CFET (complementary FET) CMOS ALD Selectivity Backside power delivery Threshold voltage