Advanced transistors (FinFET and GAA)

Which structure places nMOS and pMOS nanosheets close together on either side of a thin insulating wall to reduce cell area?

  1. AFD-SOI
  2. BPlanar MOSFET
  3. CForksheet FET
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Answer: C. Forksheet FET

A forksheet FET places nMOS and pMOS nanosheets on both sides of a dielectric wall, giving a shape like the tines of a fork. The n-to-p spacing can be greatly reduced, shrinking standard cell and SRAM area. It is being studied as a candidate generation between GAA and CFET.

  • A. FD-SOI is a planar structure with a thin silicon layer on an insulator.
  • B. A planar device is the conventional structure with a flat channel.
  • C. Correct. n and p sheets sit on either side of a dielectric wall.
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More Advanced transistors (FinFET and GAA) questions

  1. What is the state called in which the channel is so short that carriers travel from source to drain almost without scattering?
  2. Which transistor has a source, channel and drain of the same conductivity type and doping, with no PN junctions?
  3. In FinFETs built on bulk substrates, what is the purpose of a heavily doped layer at the base of the fin (the part the gate controls poorly)?
  4. Which correctly describes the "scale length (natural length) λ" used to estimate the severity of short-channel effects?
  5. What is an effect of quantum confinement when fins or nanosheets are thinned to a few nanometers?