Advanced transistors (FinFET and GAA)

In nanosheet GAA, what is the main role of the insulator (inner spacer) placed between the gate and the source/drain between the sheets?

  1. ATo reduce parasitic capacitance between the gate and source/drain and prevent shorts
  2. BTo make the channel emit light
  3. CTo amplify current
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Answer: A. To reduce parasitic capacitance between the gate and source/drain and prevent shorts

In nanosheet GAA, the gate extends into the gaps between the sheets and comes close to the source and drain. The inner spacer is the insulator placed between them, reducing gate-to-source/drain parasitic capacitance and preventing electrical shorts.

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More Advanced transistors (FinFET and GAA) questions

  1. When standard cell height is expressed in the number of routing tracks, what is the effect of reducing the number of tracks?
  2. What is the purpose of using several types of transistors with different threshold voltages on the same chip?
  3. Which technique covers the gate with insulator so that a slightly misaligned contact does not short to the gate?
  4. Why are SiGe and germanium considered or adopted instead of silicon as pMOS channel materials?
  5. Which 3D integration method builds transistor layers one after another on the wafer, without bonding chips?