Advanced transistors (FinFET and GAA)

Which correctly describes materials such as molybdenum disulfide (MoS2), researched as channel materials for future ultra-small transistors?

  1. AThey are metals a few mm thick
  2. BThey are two-dimensional materials that act as semiconductors even a few atomic layers thick
  3. CThey are insulators that do not conduct electricity
Show answer and explanation

Answer: B. They are two-dimensional materials that act as semiconductors even a few atomic layers thick

Transition metal dichalcogenides such as MoS2 keep their semiconductor properties even as 2D materials a few atomic layers thick. Silicon's mobility drops greatly when it is made extremely thin, so these materials are being studied as candidates for future ultra-thin channels.

Practice this topic Back to topic

More Advanced transistors (FinFET and GAA) questions

  1. What is the main purpose of growing raised crystal on the fins in the source and drain of a FinFET by epitaxial growth?
  2. What is the basic way to reduce metal-semiconductor contact resistance?
  3. Which is considered to show the real degree of logic scaling better than the process generation (node) name?
  4. Which devices are being researched with the aim of breaking the 60 mV/dec subthreshold swing barrier?
  5. In nanosheet GAA, what is the main role of the insulator (inner spacer) placed between the gate and the source/drain between the sheets?