Advanced transistors (FinFET and GAA)

Which company and generation were first to announce volume production of GAA (nanosheet) transistors?

  1. AIntel's 45 nm generation
  2. BSamsung's 3 nm generation (2022)
  3. CTSMC's 28 nm generation
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Answer: B. Samsung's 3 nm generation (2022)

In 2022, Samsung announced the start of volume production of GAA transistors (which it calls MBCFET) at its 3 nm generation. TSMC adopts GAA at its 2 nm generation and Intel at its 18A generation (RibbonFET).

  • A. The 45 nm generation introduced high-k/metal gates into planar transistors.
  • B. Correct. Samsung was first to announce volume production, at 3 nm.
  • C. The 28 nm generation used planar transistors.
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More Advanced transistors (FinFET and GAA) questions

  1. What is the main purpose of scaling transistors down?
  2. What does "nanosheet" refer to in a nanosheet GAA transistor?
  3. What does the "k" in "high-k gate dielectric" represent?
  4. For a FinFET whose fin is 50 nm tall and 6 nm wide, which is closest to the effective channel width per fin (the perimeter wrapped by the gate)?
  5. To adequately suppress short-channel effects in a FinFET, what is generally required of the fin width?