Advanced transistors (FinFET and GAA)

Compared with FinFETs, what is a design advantage of nanosheet GAA transistors?

  1. AChannel width can only be changed by the number of fins
  2. BDrive current can be adjusted more flexibly by changing the nanosheet width
  3. CGate length does not affect transistor characteristics
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Answer: B. Drive current can be adjusted more flexibly by changing the nanosheet width

In a FinFET, channel width can be adjusted only by the number of fins, but in a nanosheet GAA the width of the stacked sheets can be changed in the layout. Drive current can therefore be designed more flexibly, for example wider sheets for high performance and narrower ones for low power.

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More Advanced transistors (FinFET and GAA) questions

  1. Which technique, used to make the thin fins of FinFETs, uses sidewall spacers to create patterns finer than the lithography limit?
  2. In manufacturing nanosheet GAA transistors, why is only the SiGe selectively removed from stacked alternating Si and SiGe layers?
  3. What is the cause of self-heating, which tends to be a problem in FinFETs and SOI transistors?
  4. In highly scaled transistors, which factors are becoming increasingly important limits on performance?
  5. Which correctly describes materials such as molybdenum disulfide (MoS2), researched as channel materials for future ultra-small transistors?