What is Nanosheet?
A GAA transistor structure that stacks several thin, plate-like silicon channels vertically, each surrounded by the gate. Current can be tuned by the sheet width.
Nanosheet in the explanations
A FinFET's channel width can change only by fin count, but in nanosheet GAA the stacked sheets' width (e.g., 15–50 nm) can be varied continuously in layout.
Compared with FinFETs, what is a design advantage of nanosh…Nanosheet GAA starts from an epitaxial stack of alternating Si and SiGe (about 25–30% Ge).
In manufacturing nanosheet GAA transistors, why is only the…In nanosheet GAA, the gate fills the gaps between sheets and faces the source/drain only a few nm away.
In nanosheet GAA, what is the main role of the insulator (i…
Questions that mention Nanosheet (9)
- Compared with FinFETs, what is a design advantage of nanosheet GAA transistors?
- In manufacturing nanosheet GAA transistors, why is only the SiGe selectively removed from stacked alternating Si and SiGe layers?
- In nanosheet GAA, what is the main role of the insulator (inner spacer) placed between the gate and the source/drain between the sheets?
- Which company and generation were first to announce volume production of GAA (nanosheet) transistors?
- What does "nanosheet" refer to in a nanosheet GAA transistor?
- In nanosheet GAA transistors now in production, how many nanosheets are typically stacked in one transistor?
- How is the effective channel width of a FinFET adjusted?
- What is an effect of quantum confinement when fins or nanosheets are thinned to a few nanometers?
- In advanced CMOS processes, why is it necessary to lower the temperature of silicon and SiGe epitaxial growth?
Related terms
GAA (gate-all-around) FinFET SiGe (silicon-germanium) Selectivity ALD Backside power delivery Threshold voltage CMOS Epitaxial growth CFET (complementary FET)