Advanced transistors (FinFET and GAA)

What does "nanosheet" refer to in a nanosheet GAA transistor?

  1. AA sheet-like film that protects the chip
  2. BA thin, plate-shaped silicon channel a few nanometers thick, stacked vertically
  3. CA thin metal plate used as the gate insulator
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Answer: B. A thin, plate-shaped silicon channel a few nanometers thick, stacked vertically

A nanosheet is a thin, plate-shaped silicon channel a few nanometers thick and tens of nanometers wide. Several are stacked vertically, each surrounded on all sides by the gate. It is like turning FinFET fins on their side and stacking them.

  • A. It is not a protective film.
  • B. Correct. It is a stack of thin, plate-shaped channels.
  • C. The gate insulator is an insulator such as high-k, not a metal plate.
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More Advanced transistors (FinFET and GAA) questions

  1. What does the "k" in "high-k gate dielectric" represent?
  2. For a FinFET whose fin is 50 nm tall and 6 nm wide, which is closest to the effective channel width per fin (the perimeter wrapped by the gate)?
  3. To adequately suppress short-channel effects in a FinFET, what is generally required of the fin width?
  4. In high-k/metal gate transistors, why is a very thin layer such as SiO2 often placed between the silicon and the high-k film (such as hafnium oxide)?
  5. Why have III-V compound semiconductors such as InGaAs been researched as future nMOS channel materials?