Advanced transistors (FinFET and GAA)

Which correctly describes the CFET (complementary FET), researched as the structure to follow GAA?

  1. AIt simplifies the structure by eliminating the gate electrode
  2. BIt stacks nMOS and pMOS vertically to reduce cell area
  3. CIt returns transistors to a planar structure
Show answer and explanation

Answer: B. It stacks nMOS and pMOS vertically to reduce cell area

A CFET stacks the nMOS and pMOS that make up a CMOS circuit vertically instead of placing them side by side. Because the same circuit can be built in a smaller area, it is being researched and developed as the next means of scaling after GAA.

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More Advanced transistors (FinFET and GAA) questions

  1. In high-k/metal gate transistors, which is one of the main ways to adjust the threshold voltage?
  2. Which correctly describes the gate-last (replacement metal gate) process?
  3. What is an advantage of fully depleted SOI (FD-SOI) transistors?
  4. In very small transistors, what is the phenomenon called in which the threshold voltage varies because of statistical variation in the number and positions of dopant atoms in the channel?
  5. Compared with FinFETs, what is a design advantage of nanosheet GAA transistors?