A wafer with a thin silicon layer on a buried oxide (BOX) layer over a silicon substrate. It is made, for example, by bonding a hydrogen-implanted wafer and splitting it. Its low parasitic capacitance suits FD-SOI devices and MEMS.
Field: Silicon wafers
Annealing at a few hundred °C causes the hydrogen to form microcavities that link up, splitting the wafer at that depth and leaving a thin single-crystal silicon layer on oxide—an SOI wafer.
Which correctly describes a typical method of manufacturing…Annealing CMP Donor Crystal orientation Czochralski (CZ) method DZ (denuded zone) FZ method (float zone) Gettering Ingot MCZ method (magnetic-field-applied CZ)