A compound semiconductor of indium and phosphorus. As a substrate for lattice-matched layers such as InGaAs, it is used for fiber-optic lasers and photodetectors and for high-speed transistors.
Field: Compound semiconductors
InGaAsP and related alloys grown on InP can be tuned in composition to emit and detect light in the 1.3 µm band (low dispersion) and the 1.55 µm band (minimum loss, about 0.2 dB/km) of optical fiber.
What are InP (indium phosphide)-based compound semiconducto…GaAs-based (InGaP/GaAs) HBTs run from a single supply with high efficiency and dominate smartphone transmit power amplifiers, while InP HBTs, with fT of several hundred GHz, drive electronics for optical links beyond 100 Gb/s and terahertz research.
Which is an example of an application of HBTs (heterojuncti…Adjusting composition to In0.53Ga0.47As makes InGaAs lattice-matched to InP (about 0.587 nm).
What is the advantage of growing InGaAs, with its compositi…GaAs (gallium arsenide) GaN (gallium nitride) SiC (silicon carbide) Mobility III-V compound semiconductor CMOS Alloy semiconductor Vegard's law 2DEG (two-dimensional electron gas) Direct band gap