What is FD-SOI (fully depleted SOI)?
Building transistors in a very thin silicon layer on buried oxide so the channel is fully depleted. The channel can be lightly doped, and body bias can tune the threshold voltage easily.
FD-SOI (fully depleted SOI) in the explanations
In FD-SOI, an extremely thin silicon layer of about 5–7 nm is fully depleted, so short-channel effects are controlled without channel doping and random-dopant variability is small.
What is an advantage of fully depleted SOI (FD-SOI) transis…SOI is widely used for RF switches (RF-SOI) and low-power FD-SOI logic.
Which correctly describes the SOI (silicon on insulator) st…FinFETs and FD-SOI, which allow undoped channels, are advantageous here.
In very small transistors, what is the phenomenon called in…
Questions that mention FD-SOI (fully depleted SOI) (3)
- What is an advantage of fully depleted SOI (FD-SOI) transistors?
- Which correctly describes the SOI (silicon on insulator) structure?
- In very small transistors, what is the phenomenon called in which the threshold voltage varies because of statistical variation in the number and positions of dopant atoms in the channel?
Related terms
Junction capacitance (depletion capacitance) Latch-up Threshold voltage CFET (complementary FET) DTCO (design-technology co-optimization) EOT (equivalent oxide thickness) FinFET GAA (gate-all-around) Gate-last (replacement metal gate) High-k / metal gate