What is Junction capacitance (depletion capacitance)?

Capacitance arising because the depletion layer of a PN junction acts like a parallel-plate capacitor. It decreases as reverse bias widens the depletion layer; varactor diodes use this property.

Field: PN junctions and diodes

Junction capacitance (depletion capacitance) in the explanations

Questions that mention Junction capacitance (depletion capacitance) (8)

  1. Which value is closest to the relative permittivity of silicon?
  2. What happens to the width of the depletion layer when the reverse bias applied to a PN junction is increased?
  3. Which property does a variable-capacitance (varactor) diode use?
  4. How is a photodiode generally used to detect light?
  5. In a forward-biased PN junction, which capacitance arises from the storage of injected minority carriers?
  6. How does the depletion width of a one-sided abrupt junction depend on the reverse bias voltage V (when V is much larger than the built-in potential)?
  7. In a high-frequency C-V measurement of a MOS capacitor on a p-type substrate, what happens to the capacitance when a large positive gate voltage drives the surface into strong inversion?
  8. Which correctly describes the SOI (silicon on insulator) structure?

Related terms

Built-in potential EOT (equivalent oxide thickness) Depletion layer Photodiode Dark current Forward bias Diffusion capacitance Inversion layer Latch-up FD-SOI (fully depleted SOI)

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