What is Gettering?
A technique that collects and traps metal impurities in a wafer at locations away from the surface where devices are built, using oxygen precipitates and the like.
Field: Silicon wafers
Gettering in the explanations
Gettering traps metallic impurities such as iron, copper and nickel—which degrade devices—at sites away from the surface device region, inside the wafer or at the back.
Which correctly describes gettering?Oxygen pins dislocations, strengthening the wafer, and its precipitates act as gettering sites, but excess oxygen causes defects and thermal donors.
Which impurity is incorporated in relatively large amounts …The precipitates and their surrounding strain and dislocations trap metal impurities, providing intrinsic gettering that keeps contamination away from the surface device region.
What is the purpose of using bulk microdefects (BMDs), form…
Questions that mention Gettering (8)
- Which correctly describes gettering?
- Which impurity is incorporated in relatively large amounts from the crucible into silicon crystals grown by the CZ method?
- What is the purpose of using bulk microdefects (BMDs), formed by oxygen precipitation inside CZ wafers?
- Heat treatment of a wafer diffuses oxygen out from near the surface, creating a low-defect layer at the surface where devices are made. What is this layer called?
- Which is closest to the typical concentration of interstitial oxygen in silicon crystals grown by the CZ method?
- Which is a known effect of adding a trace of nitrogen during CZ crystal growth (nitrogen doping)?
- What is an advantage of a wafer with a lightly doped p-type epitaxial layer grown on a p+ substrate (p/p+ epitaxial wafer)?
- What problem occurs when mobile ions such as sodium are present in the gate oxide?
Related terms
Czochralski (CZ) method Oxygen precipitates (BMD) Annealing DZ (denuded zone) RTP (rapid thermal processing) Donor CMOS Latch-up Mobile ions Threshold voltage