Epitaxial growth

Which correctly describes selective epitaxial growth?

  1. AGrowing uniformly over the whole wafer
  2. BChoosing to grow amorphous films
  3. CGrowing crystal only where silicon is exposed and not on insulating films
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Answer: C. Growing crystal only where silicon is exposed and not on insulating films

In selective epitaxial growth, conditions are adjusted so that crystal grows only where silicon is exposed and not on oxide or nitride. It is used, for example, to embed SiGe or SiC in the source and drain of advanced CMOS to strain the channel.

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More Epitaxial growth questions

  1. What is the phenomenon called in which impurities from the substrate or elsewhere are incorporated into the growing layer through the gas phase during epitaxial growth?
  2. What is an advantage of a wafer with a lightly doped p-type epitaxial layer grown on a p+ substrate (p/p+ epitaxial wafer)?
  3. Which correctly describes the critical thickness in heteroepitaxial growth?
  4. What is the main purpose of heating the wafer in high-temperature hydrogen just before silicon epitaxial growth?
  5. Why are epitaxial layers important in the fabrication of SiC power devices?