Advanced transistors (FinFET and GAA)

Which correctly describes the "scale length (natural length) λ" used to estimate the severity of short-channel effects?

  1. AThe length of the gate wiring
  2. BA measure of how far the drain potential's influence extends into the channel; if the gate length is much longer than λ, short-channel effects are small
  3. CExactly the same value as the fin height
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Answer: B. A measure of how far the drain potential's influence extends into the channel; if the gate length is much longer than λ, short-channel effects are small

The scale length λ is a measure of the distance over which the drain potential's influence decays in the channel, determined by insulator thickness, channel thickness, permittivities and gate structure. If the gate length is several times λ or more, short-channel effects stay small. Structures where the gate surrounds more surfaces have smaller λ, allowing scaling to shorter gate lengths.

  • A. It does not represent a wiring length.
  • B. Correct. It measures how far the drain's influence reaches.
  • C. It is a different quantity from the fin height.
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More Advanced transistors (FinFET and GAA) questions

  1. What is an effect of quantum confinement when fins or nanosheets are thinned to a few nanometers?
  2. In a FinFET made in the usual orientation on a (100) wafer, the fin sidewalls that form the channel are mainly (110) planes. What is the effect on mobility?
  3. Which correctly describes the structure of a FinFET?
  4. Which correctly describes a GAA (gate-all-around) transistor?
  5. Which describes a short-channel effect in MOSFETs?