What is Gate-last (replacement metal gate)?
Building the transistor first with a dummy gate, then removing it after high-temperature steps such as source/drain activation and replacing it with a high-k dielectric and metal gate.
Gate-last (replacement metal gate) in the explanations
In a gate-last flow, polysilicon dummy gates go through the hot steps first; then the dielectric is planarized to expose the dummies, which are removed, and high-k and metal gates fill the resulting trenches.
Which correctly describes the gate-last (replacement metal …CMP planarizes STI fill oxide and interlayer dielectrics, removes excess metal from tungsten plugs and copper wiring, exposes dummy gates in gate-last flows and prepares surfaces for wafer bonding—dozens of steps in advanced logic.
Which combination correctly lists processes in which CMP is…
Questions that mention Gate-last (replacement metal gate) (2)
Related terms
Work function CMP STI (shallow trench isolation) Slurry CFET (complementary FET) DTCO (design-technology co-optimization) EOT (equivalent oxide thickness) FD-SOI (fully depleted SOI) FinFET GAA (gate-all-around)